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GBU4DE3-E3 PDF预览

GBU4DE3-E3

更新时间: 2024-11-16 15:32:51
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 260K
描述
DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

GBU4DE3-E3 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

GBU4DE3-E3 数据手册

 浏览型号GBU4DE3-E3的Datasheet PDF文件第2页浏览型号GBU4DE3-E3的Datasheet PDF文件第3页浏览型号GBU4DE3-E3的Datasheet PDF文件第4页 
GBU4A thru GBU4M  
VISHAY  
Vishay Semiconductors  
Glass Passivated Single-Phase  
Bridge Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
50 V to 1000 V  
150 A  
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
Features  
• UL Recognition file number E54214  
Case Style GBU  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Meets MSL level 1, per J-STD-020C  
RMS  
Typical Applications  
Mechanical Data  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte Tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and MIL-STD-750, Method  
2026  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Unit  
Maximum repetive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
TC = 100 °C (1)  
TA = 40 °C (2)  
Maximum average forward  
rectified output current at  
IF(AV)  
4.0  
3.0  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
150  
A
I2t  
TJ,  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
93  
Operating junction and storage temperature  
range  
- 55 to + 150  
TSTG  
Note:  
(1) Unit case mounted on 1.6 x 1.6 x 0.06” thick (4.0 x 4.0 x 0.15 cm) Al. Plate  
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) copper pads and 0.375” (9.5 mm) lead length  
Document Number 88614  
23-Nov-04  
www.vishay.com  
1

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