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GBU4G PDF预览

GBU4G

更新时间: 2024-01-11 16:06:17
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管局域网
页数 文件大小 规格书
2页 107K
描述
SILICON BRIDGE RECTIFIERS

GBU4G 技术参数

生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.02
其他特性:HIGH RELIABILITY, UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:150 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

GBU4G 数据手册

 浏览型号GBU4G的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
GBU4A --- GBU4M  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 4.0 A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
Ideal for printed circuit board  
GBU  
.933(23.7)  
.894(22.7)  
Reliable low cost construction utilizing molded  
plastic technique  
.140(3.56)  
.130(3.30)  
.185(4.7)  
.165(4.2)  
.160(4.1)  
.140(3.5)  
0
45  
Plastic materrial has U/L flammability classification  
.310(7.9)  
.290(7.4)  
.085(2.16)  
.065(1.65)  
.740(18.8)  
.720(18.3)  
+
+
94V-O  
.075(1.9)R.TYP.  
_
Mounting position: Any  
Glass passivated chip junctions  
~
~
+
.080(2.03)  
.060(1.52)  
.710(18)  
.690(17.5)  
.100(2.54)  
.085(2.16)  
.050(1.27)  
.040(1.02)  
.085(2.18)  
.075(1.90)  
.190(4.83)  
.210(5.33)  
.022(.56)  
.018(.46)  
inch(mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
GBU GBU GBU GBU GBU GBU GBU  
UNITS  
4A  
50  
35  
50  
4B  
100  
70  
4D  
4G  
400  
280  
400  
4.0  
4J  
4K  
4M  
1000  
700  
V
V
V
200  
140  
200  
600  
420  
600  
800  
560  
800  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forw ard Tc=100  
output current @TA=40  
(note 1)  
A
IF(AV)  
3.0  
(note 2)  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
V
IFSM  
150.0  
Maximum instantaneous forw ard voltage  
at 2.0 A  
1.0  
VF  
IR  
A
μ
5.0  
Maximum reverse current  
@TA=25  
500.0  
mA  
pF  
at rated DC blocking voltage @TA=125  
Typical junction capacitance per leg (note 3)  
100  
45  
CJ  
RθJA  
RθJC  
TJ  
22.0  
4.2  
Typical thermal resistance per leg  
(note 2)  
(note 1)  
/W  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) AI. Plate.  
www.galaxycn.com  
2. Units mounted on P.C.B. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length.  
3. Measured at 1.0 MHz and applied rev erse v oltage of 4.0 v olts.  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287025  

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