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GBJ2008-F PDF预览

GBJ2008-F

更新时间: 2024-11-18 04:19:27
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
3页 75K
描述
20A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ2008-F 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80Factory Lead Time:45 weeks
风险等级:1.5Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:800 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3最大非重复峰值正向电流:240 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ2008-F 数据手册

 浏览型号GBJ2008-F的Datasheet PDF文件第2页浏览型号GBJ2008-F的Datasheet PDF文件第3页 
SPICE MODELS: GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010  
GBJ20005 - GBJ2010  
20A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
GBJ  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
Dim  
A
B
C
D
E
Min  
29.70  
19.70  
17.00  
3.80  
7.30  
9.80  
2.00  
0.90  
2.30  
Max  
30.30  
20.30  
18.00  
4.20  
Surge Overload Rating to 240A Peak  
Ideal for Printed Circuit Board Applications  
UL Listed Under Recognized Component  
Index, File Number E94661  
L
A
M
K
·
Lead Free Finish/RoHS Compliant (Note 4)  
7.70  
G
H
I
10.20  
2.40  
B
D
Mechanical Data  
·
S
N
_
Case: GBJ  
1.10  
J
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
P
J
2.70  
H
I
C
K
L
3.0 X 45°  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
R
4.40  
3.40  
3.10  
2.50  
0.60  
10.80  
4.80  
3.80  
3.40  
2.90  
0.80  
11.20  
Terminals: Plated Leads, Solderable per MIL-STD-202,  
M
N
P
Method 208  
e
3
·
·
·
·
·
·
Lead Free Plating (Tin Finish).  
Polarity: Molded on Body  
G
E
E
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Marking: Type Number  
R
S
All Dimensions in mm  
Weight: 6.6 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ  
GBJ  
GBJ  
2002  
GBJ  
2004  
GBJ  
2006  
GBJ  
2008  
GBJ  
2010  
Characteristic  
Symbol  
Unit  
20005 2001  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
20  
V
A
Average Forward Rectified Output Current @ TC = 110°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
IFSM  
VFM  
IR  
240  
A
V
Forward Voltage per element  
@ IF = 10A  
1.05  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TC = 125°C  
10  
500  
µA  
I2t Rating for Fusing (t < 8.3 ms) (Note 1)  
I2t  
CT  
240  
60  
A2s  
pF  
Typical Total Capacitance per Element (Note 2)  
Typical Thermal Resistance Junction to Case (Note 3)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
0.8  
°C/W  
°C  
-55 to +150  
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS21220 Rev. 8 - 2  
1 of 3  
GBJ20005-GBJ2010  
www.diodes.com  
ã Diodes Incorporated  

GBJ2008-F 替代型号

型号 品牌 替代类型 描述 数据表
GBJ2008 DIODES

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