Datasheet > 二极管 > 桥式整流二极管> GBJ2008

GBJ2008

更新时间： 2024-11-17 22:48:51

品牌	Logo	应用领域
美台 - DIODES		二极管局域网
页数	文件大小	规格书
2页	56K
描述
20A GLASS PASSIVATED BRIDGE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

GBJ2008 数据手册

GBJ20005 - GBJ2010

20A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V

GBJ

RMS

Dim

Min

29.70

19.70

17.00

3.80

7.30

9.80

2.00

0.90

2.30

Max

30.30

20.30

18.00

4.20

Low Reverse Leakage Current

Surge Overload Rating to 240A Peak

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

7.70

UL Listed Under Recognized Component

Index, File Number E94661

10.20

2.40

1.10

Mechanical Data

2.70

3.0 X 45°

Case: Molded Plastic

4.40

3.40

3.10

2.50

0.60

10.80

4.80

3.80

3.40

2.90

0.80

11.20

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx)

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^{@ T = 25°C unless otherwise specified}

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ GBJ

20005 2001

GBJ

2002

GBJ

2004

GBJ

2006

GBJ

2008

GBJ

2010

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

RMS Reverse Voltage

280

Average Forward Rectified Output Current @ T_C= 110°C

I_O

Non-Repetitive Peak Forward Surge Current, 8.3 ms single

half-sine-wave superimposed on rated load

(JEDEC method)

I_FSM

240

Forward Voltage per element

@ I_F= 10A

V_FM

I_R

1.05

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A= 25°C

@ T_C= 125°C

500

µA

I²t Rating for Fusing (t < 8.3 ms) (Note 1)

I²t

C_j

240

A²s

Typical Junction Capacitance per Element (Note 2)

Typical Thermal Resistance Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j, T_STG

0.8

°C/W

°C

-65 to +150

Notes:

1. Non-repetitive, for t > 1ms and < 8.3 ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.

DS21220 Rev. D-2

1 of 2

GBJ20005-GBJ2010

中文翻译

下载PDF

GBJ2008 替代型号

型号	品牌	替代类型	描述	数据表
GBJ2008-BP	MCC	类似代替	Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ,
GBJ2008-F	DIODES	类似代替	20A GLASS PASSIVATED BRIDGE RECTIFIER
RS2006M	RECTRON	功能相似	SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes)

与GBJ2008相关器件

型号	品牌	获取价格	描述	数据表
GBJ2008(LS)	DIODES	获取价格	20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ2008A	DYELEC	获取价格	SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER
GBJ2008A	YANGJIE	获取价格	Bridge Rectifiers
GBJ2008-B	MCC	获取价格	Rectifier Diode,
GBJ2008-BP	MCC	获取价格	Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ,
GBJ2008-BP-HF	MCC	获取价格	Bridge Rectifier Diode, 20A, 800V V(RRM),
GBJ2008-F	DIODES	获取价格	20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ2008G	DYELEC	获取价格	SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER
GBJ2008T	DYELEC	获取价格	SINGLE PHASE 20AMP GLASS PASSIVATED BRIDGE RECTIFIER
GBJ201	HY	获取价格	GLASS PASSIVATED BRIDGE RECTIFIERS

与GBJ2008相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

GBJ2008

GBJ2008 数据手册

GBJ2008 替代型号

与GBJ2008相关器件

与GBJ2008相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GBJ2008

GBJ2008 数据手册

GBJ2008 替代型号

与GBJ2008相关器件

与GBJ2008相关文章

您还可以找

您在本页遇到什么问题？