Datasheet > GBJ2010

GBJ2010

更新时间： 2024-01-10 04:24:35

品牌	Logo	应用领域
TAITRON		二极管局域网
页数	文件大小	规格书
4页	259K
描述
Single-Phase Glass Passivated Bridge Rectifier

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技术参数
数据手册

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GBJ2010 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.22	配置：	BRIDGE, 4 ELEMENTS
二极管类型：	BRIDGE RECTIFIER DIODE	最大正向电压 (VF)：	1.05 V
最大非重复峰值正向电流：	240 A	元件数量：	4
最高工作温度：	150 °C	最大输出电流：	20 A
最大重复峰值反向电压：	1000 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

GBJ2010 数据手册

Single-Phase

Glass Passivated

Bridge Rectifier

GBJ20005 – GBJ2010

Single-Phase Glass Passivated Bridge Rectifier

Features

• Plastic package has Underwriters Laboratory Flammability

Classification 94 V-0

• Glass passivated die construction

• High case dielectric strength of 1500 V^RMS

• Low reverse leakage current

• Ideal for printed circuit boards

• Surge overload rating to 240A Peak

• This series is UL recognized under component index,

File number E194718

GBJ

• RoHS Compliant

Mechanical Data

Case:

Molded Plastic

Terminals:

Polarity:

Plated leads solderable per MIL-STD-202, method 208

Molded on Body

Mounting:

Through Hole for #6 Screw

Mounting

Torque:

6.0 In-1bs Max.

6.6 grams

Weight:

Maximum Ratings (T_Ambient=25ºC unless noted)

GBJ20 GBJ20 GBJ20 GBJ20 GBJ20 GBJ20

GBJ20

005

Symbol

Description

Unit

100

Max. Repetitive Peak Reverse Voltage

Max. RMS Voltage

200

140

400

280

600

420

800

560

1000

700

VRRM

VRMS

VDC

Max. DC Blocking Voltage

100

200

400

600

800

1000

Max. Average Forward Rectified Output

Current at TC=100°C

Peak Forward Surge Current

8.3ms single half sine-wave superimposed on

rated load(JEDEC method)

I(AV)

240

IFSM

Rating for Fusing (t<8.3ms)

240

A²s

° C

l²t

Operating and Storage Temperature Range

-65 to +150

TJ, TSTG

Rev. A/AH 2007-11-30

Page 1 of 4

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