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GBJ2001

更新时间: 2024-02-27 04:53:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 67K
描述
Bridge Rectifier Diode, 1 Phase, 20A, 100V V(RRM), Silicon,

GBJ2001 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.57其他特性:UL RECOGNIZED
最小击穿电压:100 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.05 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
最大非重复峰值正向电流:240 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBJ2001 数据手册

 浏览型号GBJ2001的Datasheet PDF文件第2页浏览型号GBJ2001的Datasheet PDF文件第3页浏览型号GBJ2001的Datasheet PDF文件第4页 
GBJ20005–GBJ2010  
Vishay Lite–On Power Semiconducter  
20A Glass Passivated Bridge Rectifier  
Features  
Glass passivated die construction  
High case dielectric strength of 1500V  
Low reverse leakage current  
RMS  
Surge overload rating to 240A peak  
Ideal for printed circuit board applications  
Plastic material – UL Recognition flammability  
classification 94V–0  
14 401  
ULRecognized file E95060  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
50  
100  
200  
400  
600  
800  
1000  
240  
Unit  
V
V
V
V
V
V
V
A
Repetitive peak reverse voltage  
=Working peak reverse voltage  
=DC Blocking voltage  
GBJ20005  
GBJ2001  
GBJ2002  
GBJ2004  
GBJ2006  
GBJ2008  
GBJ2010  
V
RRM  
=V  
RWM  
=V  
R
Peak forward surge current  
I
FSM  
Average forward current  
T =110 C  
C
I
20  
A
FAV  
Junction and storage temperature range  
T =T  
–65...+150  
C
j
stg  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =10A  
V
1.05  
10  
500  
240 A s  
pF  
V
A
A
2
F
F
T =25 C  
I
I
I t  
A
R
T =125 C  
C
R
2
2
I t Rating for fusing  
Diode capacitance  
Thermal resistance  
junction to case  
V =4V, f=1MHz  
C
D
60  
2
R
mounted on  
300x300x1.6mm aluminum plate  
R
thJC  
K/W  
Rev. A2, 24-Jun-98  
1 (4)  

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