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GBJ2002

更新时间: 2024-02-09 05:07:03
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美台 - DIODES /
页数 文件大小 规格书
2页 56K
描述
20A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ2002 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.72配置:BRIDGE, 4 ELEMENTS
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.05 V
最大非重复峰值正向电流:240 A元件数量:4
最高工作温度:150 °C最大输出电流:20 A
最大重复峰值反向电压:200 V子类别:Bridge Rectifier Diodes
表面贴装:NOBase Number Matches:1

GBJ2002 数据手册

 浏览型号GBJ2002的Datasheet PDF文件第2页 
GBJ20005 - GBJ2010  
20A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500V  
GBJ  
RMS  
Dim  
A
B
C
D
E
Min  
29.70  
19.70  
17.00  
3.80  
7.30  
9.80  
2.00  
0.90  
2.30  
Max  
30.30  
20.30  
18.00  
4.20  
Low Reverse Leakage Current  
Surge Overload Rating to 240A Peak  
Ideal for Printed Circuit Board Applications  
L
Plastic Material - UL Flammability  
Classification 94V-0  
A
M
K
7.70  
·
UL Listed Under Recognized Component  
Index, File Number E94661  
G
H
I
10.20  
2.40  
B
D
S
N
_
1.10  
J
Mechanical Data  
P
J
2.70  
H
I
K
L
3.0 X 45°  
C
·
·
Case: Molded Plastic  
R
4.40  
3.40  
3.10  
2.50  
0.60  
10.80  
4.80  
3.80  
3.40  
2.90  
0.80  
11.20  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
M
N
P
·
·
·
·
·
Polarity: Molded on Body  
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 in-lbs Maximum  
Weight: 6.6 grams (approx)  
G
E
E
R
S
Marking: Type Number  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ GBJ  
20005 2001  
GBJ  
2002  
GBJ  
2004  
GBJ  
2006  
GBJ  
2008  
GBJ  
2010  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
20  
V
A
Average Forward Rectified Output Current @ TC = 110°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
240  
A
Forward Voltage per element  
@ IF = 10A  
VFM  
IR  
1.05  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TC = 125°C  
10  
500  
µA  
I2t Rating for Fusing (t < 8.3 ms) (Note 1)  
I2t  
Cj  
240  
60  
A2s  
pF  
Typical Junction Capacitance per Element (Note 2)  
Typical Thermal Resistance Junction to Case (Note 3)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
0.8  
°C/W  
°C  
-65 to +150  
Notes:  
1. Non-repetitive, for t > 1ms and < 8.3 ms.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.  
DS21220 Rev. D-2  
1 of 2  
GBJ20005-GBJ2010  

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