Datasheet > GAE100BA60

GAE100BA60

更新时间： 2024-12-01 03:39:03

品牌	Logo	应用领域
SANREX		双极性晶体管
页数	文件大小	规格书
3页	483K
描述
IGBT MODULE

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中文翻译

获取价格

数据手册

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GAE100BA60 数据手册

IGBT MODULE

GAE100BA60

UL;E76102 M

SanRex IGBT Module GAE100BA60 is designed for high speed, high current

switching applications. This Module is electrically isolated and contains IGBT connected

with clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across

IGBT.

CES

100A

600V

CES sat

2.3V Typ

tf 0.10 s Typ

Soft recovery diode

Applications

Brake for motor control (VVVF)

Unit mm

Maximum Ratings

Unless otherwise Tj 25

Ratings

Unit

Symbol

Item

Conditions

GAE100BA60

V^CES

V^GES

Collector-Emitter Voltage

Gate-Emitter Voltage

with gate terminal shorted to emitter

with collector shorted to emitter

600

100

200

100

400

150

Collector

Current

I^CP

Pulse

Reverse Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

Tc 25

Tstg

V^ISO

2500

125

Isolation Voltage R.M.S.

A.C. minute

Mounting

Terminal

Recommended Value 2.5 3.9 25 40

Recommended Value 1.5 2.5 15 25

Typical Value

4.7 48

2.7 28

210

Mounting

Torque

N m

kgf cm

Mass

Electrical Characteristics

Ratings

Typ.

Unit

Symbol

Item

Conditions

Min.

Max.

I^GES

I^CES

Gate Leakage Current

V^GE

V^CE600V V^GE0V

V^GE0V Ic mA

20V V^CE0V

500

Collector Cut-Off Current

1.00

V ^{BR CES}

V^{GE th}

V^{CE sat}

Cies

Collector-Emitter Breakdown Voltage

Gate Threshold Voltage

Collector-Emitter Saturation Voltage

Input Capacitance

600

3.0

7.00

2.80

10.00

0.20

0.40

0.20

0.80

2.80

0.15

0.31

0.55

2.80

0.15

0.55

V^CE10V Ic 10mA

Ic 100A V^GE15V

V^CE10V V^GE0V

2.30

7.00

0.10

0.20

0.10

0.40

2.00

0.10

1MHz

Rise Time

Turn-on Delay Time

td on

Switching

Ic 100A V^GE

Vcc 300V R^G

15V/ 5V

Time

Fall Time

Turn-off Delay Time

Emitter-Collector Voltage

Reverse Recovery Time

td off

ECS

Ic 100A V^GE0V

trr

Ic 100A

IGBT-Case

Diode-Case

10V di/dt 200A/ s

Thermal Resistance

Rth j-c

Forward Voltage Drop

Reverse Recovery Time

Thermal Impedance

2.00

0.10

IF 100A, Clamp Diode

trr

IF 100A diF/dt

200A/ s, Clamp Diode

Clamp Diode

Rth j-c

12 3

中文翻译

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