Datasheet > GAE75BA60

GAE75BA60

更新时间： 2024-11-30 23:14:15

品牌	Logo	应用领域
SANREX		双极性晶体管
页数	文件大小	规格书
3页	479K
描述
IGBT MODULE

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中文翻译

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数据手册

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GAE75BA60 数据手册

IGBT MODULE

GAE75BA60

UL;E76102 M

SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching

applications. This Module is electrically isolated and contains IGBT connected with

clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across IGBT.

CES

75A

600V

CES sat

2.4V Typ

tf 0.10 s Typ

Soft recovery diode

Applications

Brake for motor control (VVVF)

Unit mm

Maximum Ratings

Unless otherwise Tj 25

Ratings

Unit

Symbol

Item

Conditions

GAE75BA60

V^CES

V^GES

Collector-Emitter Voltage

Gate-Emitter Voltage

with gate terminal shorted to emitter

with collector shorted to emitter

600

Collector

Current

I^CP

150

Pulse

Reverse Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

315

150

Tc 25

Tstg

V^ISO

2500

125

Isolation Voltage R.M.S.

A.C. minute

Mounting

Terminal

Recommended Value 2.5 3.9 25 40

Recommended Value 1.5 2.5 15 25

Typical Value

4.7 48

2.7 28

210

Mounting

Torque

N m

kgf cm

Mass

Electrical Characteristics

Ratings

Typ.

Unit

Symbol

Item

Conditions

Min.

Max.

I^GES

I^CES

Gate Leakage Current

V^GE

V^CE600V V^GE0V

V^GE0V Ic mA

20V V^CE0V

500

Collector Cut-Off Current

1.00

V ^{BR CES}

V^{GE th}

V^{CE sat}

Cies

Collector-Emitter Breakdown Voltage

Gate Threshold Voltage

Collector-Emitter Saturation Voltage

Input Capacitance

600

3.0

7.00

2.80

7.50

0.20

0.40

0.20

0.80

2.80

0.15

0.40

0.55

2.80

0.15

0.55

V^CE10V Ic 7.5mA

Ic 75A V^GE15V

V^CE10V V^GE0V

2.40

4.00

0.10

0.20

0.10

0.40

1.80

0.10

1MHz

Rise Time

Turn-on Delay Time

td on

Switching

Ic 75A V^GE

Vcc 300V R^G

15V/ 5V

Time

Fall Time

Turn-off Delay Time

Emitter-Collector Voltage

Reverse Recovery Time

td off

ECS

Ic 75A V^GE0V

trr

Ic 75A

10V di/dt 150A/ s

IGBT-Case

Thermal Resistance

Rth j-c

Diode-Case

IF 75A, Clamp Diode

Forward Voltage Drop

Reverse Recovery Time

Thermal Impedance

1.80

0.10

trr

IF 75A diF/dt

150A/ s, Clamp Diode

Clamp Diode

Rth j-c

12 3

中文翻译

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