P H O T O D I O D E
InGaAs PIN photodiode with preamp
G9911-14/-54
ROSA type, 1.3/1.55 µm, 10 Gbps
Features
Applications
Compatible with 10 Gbps Miniature Device (XMD-MSA)
High-speed response: 10 Gbps
Low power supply voltage: Vcc=Vpd=3.3 V
Differential output
SDH/SONET (STM-64/OC-192)
10 Gigabit Ethernet
XFP transceiver
Sensitivity: +2 to -20 dBm
High trans-impedance gain: 6 kΩ
Low optical return loss: 35 dB Typ.
Isolation type: Housing and signal ground are
electrically isolated.
Flex board interface (G9911-54)
ꢀ Absolute maximum ratings
Parameter
Supply voltage
Reverse voltage (photodiode)
Storage temperature *1
*1: No condensation
Symbol
Vcc
VR
Value
-0.5, +4
7
Unit
V
V
Tstg
-40 to +85
°C
ꢀ Recommended operating conditions
Parameter
Case temperature *1
Supply voltage
Reverse voltage (photodiode)
Spectral response range
Load resistance *2
Bit rate
Symbol
Value
-20 to 80
3.13 to 3.47
3.13 to 5.0
1.26 to 1.57
50
Unit
°C
V
V
µm
Ω
Tc
Vcc
Vpd
λ
RL
-
9 to 10.7
NRZ, Mark ratio=1/2
Gbps
-
Bit pattern
-
*2: Capacitive coupling
ꢀ Electrical and optical characteristics (recommended operating conditions, unless otherwise noted)
Parameter
Symbol
Conditions
λ=1.31 µm
λ=1.55 µm
Min.
0.75
0.8
-
6.6
-
Typ.
0.85
0.9
30
7.3
20
Max.
Unit
A/W
-
-
45
-
50
-
-
Responsivity
R
Supply current
Cut-off frequency
Low cut-off frequency
Noise equivalent power *3
Trans-impedance *3
Icc
fc
fc-L
NEP
Tz
Dark state, RL=∞
λ=1.55 µm, -3 dB
λ=1.55 µm, -3 dB
Dark state, to 7.5 GHz
RL=50 Ω, f=100 MHz
λ=1.55 µm,
mA
GHz
kHz
µWrms
kΩ
-
1.0
6
4.5
Minimum receivable sensitivity
Pmin
-
-
-20
+2
-18.5
-
PRBS=231-1, BER=10-12
Extinction ratio=14 dB
Differential
,
dBm
Maximum receivable sensitivity
Output amplitude
Pmax
Vomax
350
-
-
450
0.05
-
550
1
100
-
mVpp
nA
Tc=25 °C
Dark state,
D
I
Dark current
Vpd=3.3 V
Optical return loss
ORL
λ=1.31/1.55 µm
27
35
dB
*3: Single-ended (Vout+) measurement
1