是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 配置: | BRIDGE, 6 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | BRIDGE RECTIFIER DIODE |
元件数量: | 6 | 相数: | 3 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G20120Z1FN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 3 Phase, Silicon, | |
G20120Z1TBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 3 Phase, Silicon, | |
G20120Z1TC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 3 Phase, Silicon, | |
G20120Z1TN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 3 Phase, Silicon, | |
G20-135-1P208 | TDK |
获取价格 |
Programmable Power Supplies | |
G20-135-3P208 | TDK |
获取价格 |
Programmable Power Supplies | |
G20-135-3P400 | TDK |
获取价格 |
Programmable Power Supplies | |
G20-135-3P408 | TDK |
获取价格 |
Programmable Power Supplies | |
G20160B1EB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
G20160B1EBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, |