Datasheet > FZ400R65KE3

FZ400R65KE3

更新时间： 2023-09-03 20:28:18

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FZ400R65KE3 数据手册

FZ400R65KE3

Highly insulated module

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features

• Electrical features

- V_CES= 6500 V

- I_{C nom}= 400 A / I_CRM= 800 A

- Low V_CE,sat

• Mechanical features

- Extended storage temperature down to T_stg= -55 °C

- High creepage and clearance distances

- Package with CTI > 600

- Package with enhanced insulation of 10.4 kV AC 60 s

- AlSiC base plate for increased thermal cycling capability

Potential applications

• Medium-voltage converters

• Traction drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 1.10

2021-10-27

12 3 4 5 6 7...14

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型号	品牌	替代类型	描述	数据表
FZ400R65KE3NOSA1	INFINEON	功能相似	Insulated Gate Bipolar Transistor,
FZ400R65KF2	INFINEON	功能相似	IGBT-modules

型号	品牌	获取价格	描述	数据表
FZ400R65KE3NOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FZ400R65KF1	EUPEC	获取价格	IGBT-Module
FZ400R65KF2	INFINEON	获取价格	IGBT-modules
FZ400S17K6CB2	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel
FZ500R12KF	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 500A I(C) \| M:HL093HW048
FZ500R12KL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 500A I(C) \| M:HL093HW048
FZ500R65KE3	INFINEON	获取价格	high insulated module
FZ500R65KE3NOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6500V V(BR)CES, N-Channel, MODULE-7
FZ500R65KE3T	INFINEON	获取价格	high insulated module
FZ50A05KN	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 500V V(BR)CES \| 50A I(C) \| MODULE-Q