是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 6300 V |
配置: | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 7350 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 5900 ns |
标称接通时间 (ton): | 1120 ns | VCEsat-Max: | 4.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FZ400R65KE3 | INFINEON |
功能相似 |
10.4kV isolation | |
FZ400R65KE3NOSA1 | INFINEON |
功能相似 |
Insulated Gate Bipolar Transistor, |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ400S17K6CB2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel | |
FZ500R12KF | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 500A I(C) | M:HL093HW048 | |
FZ500R12KL | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 500A I(C) | M:HL093HW048 | |
FZ500R65KE3 | INFINEON |
获取价格 |
high insulated module | |
FZ500R65KE3NOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 6500V V(BR)CES, N-Channel, MODULE-7 | |
FZ500R65KE3T | INFINEON |
获取价格 |
high insulated module | |
FZ50A05KN | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | MODULE-Q | |
FZ50A06KL | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) | |
FZ50A10KN | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 50A I(C) | MODULE-Q | |
FZ50A12KF | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C) |