是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3P | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX20SMH3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247VAR | |
FX20SMJ03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-247VAR | |
FX20SMJ-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Meta | |
FX20SMJ06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-247VAR | |
FX20SMJ-06 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.097ohm, 1-Element, P-Channel, Silicon, Met | |
FX20SMJ-06 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.166ohm, 1-Element, P-Channel, Silicon, Met | |
FX20SMJ2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-247VAR | |
FX20SMJ-2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.32ohm, 1-Element, P-Channel, Silicon, Met | |
FX20SMJ-2 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide | |
FX20SMJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247VAR |