是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.13 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX20UMJ06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
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FX20UMJ-06 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.097ohm, 1-Element, P-Channel, Silicon, Met |
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FX20UMJ-06 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.166ohm, 1-Element, P-Channel, Silicon, Met |
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FX20UMJ2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-220AB |
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FX20UMJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-220AB |
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FX20UMJ-3 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide |
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FX20VS-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.15ohm, 1-Element, P-Channel, Silicon, Meta |
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FX20VS06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
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FX20VS-06 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Meta |
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FX20VS2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-220AB |
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