FX20VSJ-3

更新时间： 2024-11-22 22:15:23

品牌	Logo	应用领域
POWEREX		晶体开关晶体管功率场效应晶体管脉冲
页数	文件大小	规格书
4页	53K
描述
Pch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

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数据手册

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FX20VSJ-3 数据手册

MITSUBISHI Pch POWER MOSFET

FX20VSJ-3

HIGH-SPEED SWITCHING USE

FX20VSJ-3

OUTLINE DRAWING

Dimensions in mm

10.5 max

4.5

1.3

+0.3

–0

0.5

0.8

1 GATE

4V DRIVE

•

DRAIN

SOURCE

DRAIN

VDSS ............................................................ –150V

rDS (ON) (MAX) ................................................ 0.29Ω

•

ID ................................................................... –20A

Integrated Fast Recovery Diode (TYP.) ........ 100ns

•

TO-220S

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

–150

±20

–20

IDM

IDA

Drain current (Pulsed)

–80

Avalanche drain current (Pulsed) L = 30µH

Source current

–20

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

–80

°C

Tch

–55 ~ +150

1.2

Tstg

—

Storage temperature

Weight

Typical value

Jan.1999

12 3 4

中文翻译

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