是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220S | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 45 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX20VSJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-263AB |
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FX20VSJ-3 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE |
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FX20VSJ-3 | POWEREX |
获取价格 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
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FX20VSJ-3 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET |
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FX20VSJ-3-A1 | RENESAS |
获取价格 |
FX20VSJ-3-A1 |
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FX20VSJ-3-T11 | RENESAS |
获取价格 |
FX20VSJ-3-T11 |
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FX210 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4A I(D) | DIP |
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FX2-100P-0.635SH(71) | HRS |
获取价格 |
连接器类型:插头;线束品:无;PIN数:100;额定电流:0.5 A;(AC)额定电压:A |
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FX2-100P-1.27DS | HRS |
获取价格 |
1.27mm Pitch Multi-function Two Piece Connector |
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FX2-100P-1.27DS(71) | HRS |
获取价格 |
1.27mm Pitch Multi-function Two Piece Connector |
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