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FX20KMJ-06-8A PDF预览

FX20KMJ-06-8A

更新时间: 2024-11-19 20:03:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 175K
描述
FX20KMJ-06-8A

FX20KMJ-06-8A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

FX20KMJ-06-8A 数据手册

 浏览型号FX20KMJ-06-8A的Datasheet PDF文件第2页浏览型号FX20KMJ-06-8A的Datasheet PDF文件第3页浏览型号FX20KMJ-06-8A的Datasheet PDF文件第4页浏览型号FX20KMJ-06-8A的Datasheet PDF文件第5页浏览型号FX20KMJ-06-8A的Datasheet PDF文件第6页浏览型号FX20KMJ-06-8A的Datasheet PDF文件第7页 
FX20KMJ-06  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G1442-0200  
(Previous: MEJ02G0275-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : – 60 V  
DS(ON) (max) : 97 mΩ  
V
r
ID : – 20 A  
Integrated Fast Recovery Diode (TYP.) : 50 ns  
Viso : 2000 V  
Outline  
RENESAS Package code: PRSS0003AB-A  
(Package name: TO-220FN)  
1. Gate  
2. Drain  
3. Source  
1
2
Applications  
Motor control, Lamp contrC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
–60  
Unit  
Conditions  
VGS = 0 V  
V
V
±20  
VDS = 0 V  
–20  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
–80  
A
IDA  
–20  
A
L = 100 µH  
IS  
–20  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–80  
A
PD  
25  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
– 55 to +150  
– 55 to +150  
2000  
AC for 1 minute,  
Terminal to case  
Mass  
2.0  
g
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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