Datasheet > FX20KMJ-2

FX20KMJ-2

更新时间： 2024-11-18 22:32:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体开关晶体管局域网
页数	文件大小	规格书
4页	54K
描述
HIGH-SPEED SWITCHING USE

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中文翻译

获取价格

数据手册

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FX20KMJ-2 数据手册

MITSUBISHI Pch POWER MOSFET

FX20KMJ-2

HIGH-SPEED SWITCHING USE

FX20KMJ-2

OUTLINE DRAWING

Dimensions in mm

10 ± 0.3

2.8 ± 0.2

φ 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.25

0.75 ± 0.15

2.54 ± 0.25

4V DRIVE

•

GATE

DRAIN

SOURCE

VDSS ............................................................. –100V

•

rDS (ON) (MAX) ................................................ 0.26Ω

ID .................................................................... –20A

•

Integrated Fast Recovery Diode (TYP.) .........100ns

•

Viso ................................................................................ 2000V

•

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

–100

±20

–20

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

IDM

IDA

–80

L = 50µH

–20

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

ISM

–80

°C

Tch

–55 ~ +150

2000

2.0

Tstg

Viso

—

AC for 1minute, Terminal to case

Typical value

Weight

Jan.1999

12 3 4

中文翻译

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