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FX20ASJ-2 PDF预览

FX20ASJ-2

更新时间: 2024-02-22 08:34:44
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管
页数 文件大小 规格书
7页 173K
描述
High-Speed Switching Use Pch Power MOS FET

FX20ASJ-2 数据手册

 浏览型号FX20ASJ-2的Datasheet PDF文件第2页浏览型号FX20ASJ-2的Datasheet PDF文件第3页浏览型号FX20ASJ-2的Datasheet PDF文件第4页浏览型号FX20ASJ-2的Datasheet PDF文件第5页浏览型号FX20ASJ-2的Datasheet PDF文件第6页浏览型号FX20ASJ-2的Datasheet PDF文件第7页 
FX20ASJ-2  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G1441-0200  
(Previous: MEJ02G0281-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : – 100 V  
DS(ON) (max) : 0.26 Ω  
V
r
ID : – 20 A  
Integrated Fast Recovery Diode (TYP.) : 100 ns  
Outline  
RENESAS Package code: PRSS0004ZA-A  
(Package name: MP-3A)  
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
2, 4  
Applications  
Motor control, Lamp coDC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
–100  
Unit  
Conditions  
VGS = 0 V  
V
V
±20  
VDS = 0 V  
–20  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
–80  
A
IDA  
–20  
A
L = 50 µH  
IS  
–20  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
–80  
A
PD  
35  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
0.32  
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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