生命周期: | Transferred | 零件包装代码: | TSSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS | 最小漏源击穿电压: | 12 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.019 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1.3 W |
最大脉冲漏极电流 (IDM): | 30 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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FTD8002 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device | |
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N-Channel Silicon MOSFET General-Purpose Switching Device | |
FTDF020F020 | IVO |
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Photoelectric Sensor, Square | |
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2A,1000V, Bridge Rectifiers | |
FTDF30K | BL Galaxy Electrical |
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Silicon Bridge Rectifiers | |
FTDF30M | BL Galaxy Electrical |
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Silicon Bridge Rectifiers | |
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2A,1000V, Surface Mount Bridge Rectifiers | |
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2A,1000V, Surface Mount Bridge Rectifiers | |
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Photoelectric Sensor, 5mm Min, 5mm Max |