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FTD8002

更新时间： 2024-11-05 03:38:03
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4页 41K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

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中文翻译

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FTD8002 技术参数

生命周期：Transferred零件包装代码：TSSOP
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.38Is Samacsys：N
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：8 A最大漏极电流 (ID)：8 A
最大漏源导通电阻：0.017 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.45 W
最大脉冲漏极电流 (IDM)：40 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FTD8002 数据手册

 浏览型号FTD8002的Datasheet PDF文件第2页浏览型号FTD8002的Datasheet PDF文件第3页浏览型号FTD8002的Datasheet PDF文件第4页 
Ordering number : ENN7752  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
FTD8002  
Features  
• Ultralow ON-resistance.  
•
2.5V drive.  
•
Mount height 1.1mm.  
•
Best suited for switching of lithium-ion battery with drain common.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
±12  
8
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW≤10µs, duty cycle≤1%  
40  
A
DP  
P
Mounted on a ceramic board (1000mm2✕0.8mm)1unit  
Mounted on a ceramic board (1000mm2✕0.8mm)  
1.4  
1.45  
150  
W
W
°C  
°C  
D
P
T
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
30  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0  
GS  
1
µA  
µA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±8V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
0.5  
11  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =8A  
19  
S
D
R
(on)1  
I
D
I
D
I
D
I
D
=8A, V =4.5V  
GS  
7
13  
14  
15  
17  
17  
19  
22  
24  
mΩ  
mΩ  
mΩ  
mΩ  
DS  
DS  
DS  
DS  
R
R
R
(on)2  
(on)3  
(on)4  
=6A, V =4V  
GS  
7.5  
8.5  
9.5  
Static Drain-to-Source On-State Resistance  
=4A, V =3.1V  
GS  
=4A, V =2.5V  
GS  
Marking : D8002  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
73004PA TS IM TA-100774 No.7752-1/4  
1234

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