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FT150R12KE3-B4

更新时间： 2024-09-18 21:07:35
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
8页 390K
描述
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES

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中文翻译

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FT150R12KE3-B4 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.73最大集电极电流 (IC)：200 A
集电极-发射极最大电压：1200 V门极-发射极最大电压：20 V
元件数量：3最高工作温度：125 °C
最大功率耗散 (Abs)：700 W子类别：Insulated Gate BIP Transistors
VCEsat-Max：2.15 VBase Number Matches：1

FT150R12KE3-B4 数据手册

 浏览型号FT150R12KE3-B4的Datasheet PDF文件第2页浏览型号FT150R12KE3-B4的Datasheet PDF文件第3页浏览型号FT150R12KE3-B4的Datasheet PDF文件第4页浏览型号FT150R12KE3-B4的Datasheet PDF文件第5页浏览型号FT150R12KE3-B4的Datasheet PDF文件第6页浏览型号FT150R12KE3-B4的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FT150R12KE3_B4  
Vorläufige Daten  
preliminary data  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C  
T† = 25°C  
I† ÒÓÑ  
I†  
150  
200  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms, T† = 80°C  
T† = 25°C  
I†ç¢  
PÚÓÚ  
300  
700  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 150 A, V•Š = 15 V, TÝÎ = 25°C  
I† = 150 A, V•Š = 15 V, TÝÎ = 125°C  
V†Š ÙÈÚ  
1,70 2,15  
2,00  
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 6,00 mA, V†Š = V•Š, TÝÎ = 25°C  
V•ŠÚÌ  
Q•  
5,0  
5,8  
1,40  
5,0  
6,5  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
10,5  
0,40  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 150 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 125°C  
tÁ ÓÒ  
tØ  
0,28  
0,30  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 150 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 125°C  
0,04  
0,05  
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 150 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 125°C  
tÁ ÓËË  
tË  
0,50  
0,65  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 150 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 125°C  
0,10  
0,20  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 150 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 2,4 Â, TÝÎ = 125°C  
EÓÒ  
EÓËË  
6,50  
10,0  
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 150 A, V†Š = 600 V, L» = 70 nH  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 2,4 Â, TÝÎ = 125°C  
14,0  
22,0  
mJ  
mJ  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
600  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,18 K/W  
prepared by: Christian Wolf  
approved by: Robert Severin  
date of publication: 2003-7-31  
revision: 2.0  
1
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中文翻译

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