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FSX017WF PDF预览

FSX017WF

更新时间: 2024-11-04 22:09:15
品牌 Logo 应用领域
富士通 - FUJITSU 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 95K
描述
General Purpose GaAs FET

FSX017WF 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:compliant
风险等级:5.27Is Samacsys:N
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 VFET 技术:JUNCTION
最高频带:X BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

FSX017WF 数据手册

 浏览型号FSX017WF的Datasheet PDF文件第2页浏览型号FSX017WF的Datasheet PDF文件第3页浏览型号FSX017WF的Datasheet PDF文件第4页 
FSX017WF  
General Purpose GaAs FET  
FEATURES  
• Medium Power Output: P  
=21.5dB (Typ.)@8.0GHz  
1dB  
• High Power Gain: G  
• Hermetic Metal/Ceramic Package  
• Proven Reliability  
=11dB (Typ.)@8.0GHz  
1dB  
DESCRIPTION  
The FSX017WF is a general purpose GaAs FET designed for medium  
power applications up to the 12GHz. These devices have a wide  
dynamic range and are suitable for use in medium power, wide band,  
linear drive amplifiers or oscillators.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
12  
-5  
V
V
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
1.0  
-65 to +175  
175  
W
tot  
T
T
°C  
°C  
stg  
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain - source operating voltage (V ) should not exceed 8 volts.  
DS  
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with  
gate resistance of 2000.  
3. The operating channel temperature (T ) should not exceed 145°C.  
ch  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 3V, V  
= 0V  
GS  
Saturated Drain Current  
I
35  
55  
75  
-
mA  
DS  
DS  
DS  
DSS  
g
m
Transconductance  
Pinch-off Voltage  
= 3V, I  
= 27mA  
= 2.7mA  
-
50  
mS  
V
DS  
V
p
= 3V, I  
DS  
-0.7 -1.2  
-1.7  
-
V
-
V
Gate Source Breakdown Voltage  
Noise Figure  
= -2.7µA  
-5.0  
GSO  
NF  
GS  
2.5  
-
-
dB  
dB  
-
V
= 3V, I  
= 10mA  
DS  
f = 8GHz  
DS  
G
as  
Associated Gain  
-
-
10.5  
21.5  
-
-
f = 4GHz  
f = 8GHz 20.5 21.5  
f = 12GHz  
dBm  
dBm  
V
= 8V,  
DS  
= 0.7I  
P
Output Power at 1 dB G.C.P.  
Power Gain at 1 dB G.C.P.  
1dB  
I
DS  
DSS  
-
-
-
20.5  
15.0  
dBm  
-
-
-
f = 4GHz  
f = 8GHz  
f = 12GHz  
dB  
dB  
dB  
V
= 8V,  
DS  
= 0.7I  
G
10.0 11.0  
-
1dB  
I
DS  
DSS  
7.5  
R
Thermal Resistance  
CASE STYLE: WF  
Channel to Case  
-
120  
150  
°C/W  
th  
G.C.P.: Gain Compression Point  
Edition 1.2  
July 1999  
1

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