Datasheet > FSYA150D1

FSYA150D1

更新时间： 2024-01-27 13:48:45

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	61K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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数据手册

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FSYA150D1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	CHIP CARRIER, R-CBCC-N3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.3
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (ID)：	39 A
最大漏源导通电阻：	0.055 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-CBCC-N3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	117 A
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	NO LEAD
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FSYA150D1 数据手册

FSYA150D, FSYA150R

Data Sheet

January 1999

File Number 4648

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 39A, 100V, r

• Total Dose

= 0.055Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 7.0nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Packaging

SMD-1

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSYA150D1

FSYA150D3

FSYA150R1

FSYA150R3

FSYA150R4

10K

100K

Commercial

TXV

Space

Formerly available as type TA17656.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

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与FSYA150D1相关器件

型号	品牌	描述	获取价格	数据表
FSYA150D3	INTERSIL	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	获取价格
FSYA150R	INTERSIL	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	获取价格
FSYA150R1	INTERSIL	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	获取价格
FSYA150R3	INTERSIL	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	获取价格
FSYA150R4	INTERSIL	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	获取价格
FSYA250D	INTERSIL	27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	获取价格

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