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FSYA450D1

更新时间： 2024-01-19 09:11:13
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 60K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSYA450D1 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：CHIP CARRIER, R-CBCC-N3
针数：3Reach Compliance Code：compliant
风险等级：5.3外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.53 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：33 A认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSYA450D1 数据手册

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FSYA450D, FSYA450R  
Data Sheet  
March 1999  
File Number 4678  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 11A, 500V, r  
• Total Dose  
= 0.530Ω  
DS(ON)  
The Discrete Products Operation of Intersil has developed a  
series of Radiation Hardened MOSFETs specifically  
designed for commercial and military space applications.  
Enhanced Power MOSFET immunity to Single Event Effects  
(SEE), Single Event Gate Rupture (SEGR) in particular, is  
combined with 100K RADS of total dose hardness to provide  
devices which are ideally suited to harsh space  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
environments. The dose rate and neutron tolerance  
necessary for military applications have not been sacrificed.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
• Photo Current  
- 30nA Per-RAD(Si)/s Typically  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS)  
structure. It is specially designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, motor drives,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E12 Neutrons/cm  
2
2
- Usable to 3E13 Neutrons/cm  
Symbol  
D
G
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
S
Formerly available as type TA17659.  
Packaging  
Ordering Information  
SMD-1  
PART  
RAD LEVEL SCREENING LEVEL  
NUMBER/BRAND  
10K  
Commercial  
TXV  
FSYA450D1  
10K  
FSYA450D3  
FSYA450R1  
FSYA450R3  
FSYA450R4  
100K  
100K  
100K  
Commercial  
TXV  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-1  
12345678

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