Datasheet > FSYA450D1

FSYA450D1

更新时间： 2024-11-08 22:10:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	60K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FSYA450D1 数据手册

FSYA450D, FSYA450R

Data Sheet

March 1999

File Number 4678

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 11A, 500V, r

• Total Dose

= 0.530Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

DSS

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 30nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E12 Neutrons/cm

- Usable to 3E13 Neutrons/cm

Symbol

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Formerly available as type TA17659.

Packaging

Ordering Information

SMD-1

PART

RAD LEVEL SCREENING LEVEL

NUMBER/BRAND

10K

Commercial

TXV

FSYA450D1

10K

FSYA450D3

FSYA450R1

FSYA450R3

FSYA450R4

100K

Commercial

TXV

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

中文翻译

下载PDF

与FSYA450D1相关器件

型号	品牌	获取价格	描述	数据表
FSYA450D3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA450R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSYA9150D	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150D3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150R	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150R1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYA9150R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

与FSYA450D1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

FSYA450D1

FSYA450D1 数据手册

与FSYA450D1相关器件

与FSYA450D1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FSYA450D1

FSYA450D1 数据手册

与FSYA450D1相关器件

与FSYA450D1相关文章

您还可以找

您在本页遇到什么问题？