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FSYA250R1

更新时间： 2024-01-11 03:39:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 49K
描述
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSYA250R1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.92
其他特性：RADIATION HARDENED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：27 A
最大漏极电流 (ID)：27 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：81 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

FSYA250R1 数据手册

 浏览型号FSYA250R1的Datasheet PDF文件第2页浏览型号FSYA250R1的Datasheet PDF文件第3页浏览型号FSYA250R1的Datasheet PDF文件第4页浏览型号FSYA250R1的Datasheet PDF文件第5页浏览型号FSYA250R1的Datasheet PDF文件第6页浏览型号FSYA250R1的Datasheet PDF文件第7页 
FSYA250D,  
FSYA250R  
27A, 200V, 0.100 Ohm, Rad Hard,  
June 1998  
SEGR Resistant, N-Channel Power MOSFETs  
Features  
Description  
• 27A, 200V, r  
• Total Dose  
= 0.100Ω  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs specif-  
ically designed for commercial and military space applica-  
DS(ON)  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
tions. Enhanced Power MOSFET immunity to Single Event  
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-  
lar, is combined with 100K RADS of total dose hardness to  
provide devices which are ideally suited to harsh space envi-  
ronments. The dose rate and neutron tolerance necessary  
for military applications have not been sacrificed.  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be oper-  
ated directly from integrated circuits.  
• Photo Current  
- 12nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSYA250D1  
FSYA250D3  
FSYA250R1  
FSYA250R3  
FSYA250R4  
10K  
Symbol  
D
100K  
100K  
100K  
Commercial  
TXV  
Space  
G
Formerly available as type TA17657.  
S
Package  
SMD1  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4313.1  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-125  
12345678

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