Datasheet > FSL130R1

FSL130R1

更新时间： 2024-11-08 22:32:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	49K
描述
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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FSL130R1 数据手册

FSL130D, FSL130R

8A, 100V, 0.230 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

June 1998

Features

Description

• 8A, 100V, r

• Total Dose

= 0.230Ω

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

DS(ON)

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Commercial

TXV

FSL130D1

FSL130D3

FSL130R1

FSL130R3

FSL130R4

10K

Symbol

100K

Commercial

TXV

Space

Formerly available as type TA17636.

Package

TO-205AF

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 4031.3

3-29

12 3 4 5 6 7 8

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与FSL130R1相关器件

型号	品牌	获取价格	描述	数据表
FSL130R3	INTERSIL	获取价格	8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL130R4	INTERSIL	获取价格	8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL136HR	FAIRCHILD	获取价格	Green Mode Fairchild Power Switch (FPSâ¢)
FSL136HR	ONSEMI	获取价格	650V 集成电源开关，带 100kHz 频率和可调节电流限制，用于 20W 离线反激转换
FSL136HRL	FAIRCHILD	获取价格	Switching Controller, Current-mode, 110kHz Switching Freq-Max, PDSO8
FSL136HRL	ONSEMI	获取价格	650V 集成电源开关，带 100kHz 频率和可调节电流限制，用于 20W 离线反激转换
FSL136HRLX	FAIRCHILD	获取价格	暂无描述
FSL136HRLX	ONSEMI	获取价格	650V 集成电源开关，带 100kHz 频率和可调节电流限制，用于 20W 离线反激转换
FSL136MR	ONSEMI	获取价格	650V 集成电源开关，带 67kHz 频率和可调电流限值，用于 20W 离线反激转换器
FSL136MR	FAIRCHILD	获取价格	Green Mode Fairchild Power Switch (FPSâ¢)

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