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FSL130R4 PDF预览

FSL130R4

更新时间: 2024-11-08 22:32:11
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 49K
描述
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

FSL130R4 数据手册

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FSL130D, FSL130R  
8A, 100V, 0.230 Ohm, Rad Hard,  
SEGR Resistant, N-Channel Power MOSFETs  
June 1998  
Features  
Description  
• 8A, 100V, r  
• Total Dose  
= 0.230  
The Discrete Products Operation of Intersil Corporation has  
developed a series of Radiation Hardened MOSFETs specif-  
ically designed for commercial and military space applica-  
DS(ON)  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
tions. Enhanced Power MOSFET immunity to Single Event  
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-  
lar, is combined with 100K RADS of total dose hardness to  
provide devices which are ideally suited to harsh space envi-  
ronments. The dose rate and neutron tolerance necessary  
for military applications have not been sacrificed.  
• Single Event  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 80% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
The Intersil portfolio of SEGR resistant radiation hardened  
MOSFETs includes N-Channel and P-Channel devices in a  
variety of voltage, current and on-resistance ratings.  
Numerous packaging options are also available.  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
- Typically Survives 2E12 if Current Limited to I  
DM  
This MOSFET is an enhancement-mode silicon-gate power  
field-effect transistor of the vertical DMOS (VDMOS) struc-  
ture. It is specially designed and processed to be radiation  
tolerant. The MOSFET is well suited for applications  
exposed to radiation environments such as switching regula-  
tion, switching converters, motor drives, relay drivers and  
drivers for high-power bipolar switching transistors requiring  
high speed and low gate drive power. This type can be  
operated directly from integrated circuits.  
• Photo Current  
- 1.5nA Per-RAD(Si)/s Typically  
• Neutron  
- Maintain Pre-RAD Specifications  
for 3E13 Neutrons/cm  
2
2
- Usable to 3E14 Neutrons/cm  
Reliability screening is available as either commercial, TXV  
equivalent of MIL-S-19500, or Space equivalent of  
MIL-S-19500. Contact Intersil for any desired deviations  
from the data sheet.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Commercial  
TXV  
FSL130D1  
FSL130D3  
FSL130R1  
FSL130R3  
FSL130R4  
10K  
Symbol  
D
100K  
100K  
100K  
Commercial  
TXV  
Space  
G
Formerly available as type TA17636.  
S
Package  
TO-205AF  
G
D
S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 4031.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
3-29  

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