生命周期: | Active | 包装说明: | SIMILAR TO TO-220, 3 PIN |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.57 |
Is Samacsys: | N | 其他特性: | LOW POWER LOSS |
应用: | FAST RECOVERY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.3 V |
JESD-30 代码: | R-PSFM-T3 | 最大非重复峰值正向电流: | 120 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -40 °C | 最大输出电流: | 10 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 400 V | 最大反向恢复时间: | 0.045 µs |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FSF10A60 | NIEC |
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Low Forward Voltage Drop Diode | |
FSF10A60B | NIEC |
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FRD - Low Forward Voltage Drop | |
FSF10B60 | NIEC |
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Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, | |
FSF10B60B | NIEC |
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Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, | |
FSF10D60 | NIEC |
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Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, | |
FSF10F60 | KYOCERA AVX |
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Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSF10F60B | KYOCERA AVX |
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Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSF10H60 | KYOCERA AVX |
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Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSF10HU60 | KYOCERA AVX |
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Fast recovery diodes are PN junction diodes with the same structure and function as genera | |
FSF1340 | MICROSEMI |
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Small Signal Field-Effect Transistor, TO-254, 3 PIN |