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FS70UMJ-2 PDF预览

FS70UMJ-2

更新时间: 2024-11-14 07:00:11
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管
页数 文件大小 规格书
7页 172K
描述
High-Speed Switching Use Nch Power MOS FET

FS70UMJ-2 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.32Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):70 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):280 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FS70UMJ-2 数据手册

 浏览型号FS70UMJ-2的Datasheet PDF文件第2页浏览型号FS70UMJ-2的Datasheet PDF文件第3页浏览型号FS70UMJ-2的Datasheet PDF文件第4页浏览型号FS70UMJ-2的Datasheet PDF文件第5页浏览型号FS70UMJ-2的Datasheet PDF文件第6页浏览型号FS70UMJ-2的Datasheet PDF文件第7页 
FS70UMJ-2  
High-Speed Switching Use  
Nch Power MOS FET  
REJ03G1435-0200  
(Previous: MEJ02G0072-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : 100 V  
DS(ON) (max) : 17 mΩ  
V
r
ID : 70 A  
Integrated Fast Recovery Diode (TYP.) : 115 ns  
Outline  
RENESAS Package code: PRSS0004AA-A  
(Package name: TO-220)  
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
3
Applications  
Motor control, Lamp contrC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
Conditions  
VGS = 0 V  
100  
V
V
±20  
VDS = 0 V  
70  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
280  
A
IDA  
70  
70  
A
L = 100 µH  
IS  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Mass  
ISM  
280  
A
PD  
125  
W
°C  
°C  
g
Tch  
Tstg  
– 55 to +150  
– 55 to +150  
2.0  
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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