生命周期: | Active | 零件包装代码: | TO-220S |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 70 A |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 70 W | 最大脉冲漏极电流 (IDM): | 280 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS70VSH-03-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
FS70VSH-03-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta | |
FS70VSH06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB | |
FS70VSH-06-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Me | |
FS70VSH-06-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Me | |
FS70VSH2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-263AB | |
FS70VSH-2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Me | |
FS70VSH-2-T1 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met | |
FS70VSH-2-T2 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Met | |
FS70VSJ03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB |