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FS70VS-06 PDF预览

FS70VS-06

更新时间: 2024-11-20 07:00:11
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
5页 177K
描述
MITSUBISHI Nch POWER MOSFET

FS70VS-06 技术参数

生命周期:Not Recommended零件包装代码:TO-220S
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.36Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):70 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):280 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS70VS-06 数据手册

 浏览型号FS70VS-06的Datasheet PDF文件第2页浏览型号FS70VS-06的Datasheet PDF文件第3页浏览型号FS70VS-06的Datasheet PDF文件第4页浏览型号FS70VS-06的Datasheet PDF文件第5页 
To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank r your understanding.  
Except for our corporate trademark, logo and corporate statemes whatsoever have been  
made to the contents of the document, and these changes dteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the bufrequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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