Datasheet > FS50VS-3

FS50VS-3

更新时间： 2024-11-13 22:08:31

品牌	Logo	应用领域
POWEREX		晶体开关晶体管脉冲
页数	文件大小	规格书
4页	46K
描述
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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中文翻译

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数据手册

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FS50VS-3 数据手册

MITSUBISHI Nch POWER MOSFET

FS50VS-3

HIGH-SPEED SWITCHING USE

FS50VS-3

OUTLINE DRAWING

Dimensions in mm

10.5MAX.

4.5

1.3

+0.3

–0

0.5

0.8

w e

w r

q GATE

¡10V DRIVE

w DRAIN

e SOURCE

r DRAIN

¡VDSS ................................................................................150V

¡rDS (ON) (MAX) .............................................................. 31mΩ

¡ID ......................................................................................... 50A

¡Integrated Fast Recovery Diode (TYP.) ...........130ns

TO-220S

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol

VDSS

VGSS

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Conditions

Ratings

Unit

VGS = 0V

VDS = 0V

150

±20

IDM

IDA

Drain current (Pulsed)

200

Avalanche drain current (Pulsed) L = 100µH

Source current

ISM

Source current (Pulsed)

Maximum power dissipation

Channel temperature

200

125

°C

Tch

Tstg

—

–55 ~ +150

1.2

Storage temperature

°C

Weight

Typical value

Feb.1999

12 3 4

中文翻译

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与FS50VS-3相关器件

型号	品牌	获取价格	描述	数据表
FS50VS-3-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Me
FS50VS-3-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Me
FS50VSH03	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 50A I(D) \| TO-263AB
FS50VSH-03	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Met
FS50VSH-03-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Met
FS50VSH-03-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Met
FS50VSH06	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 50A I(D) \| TO-263AB
FS50VSH-06-T1	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
FS50VSH-06-T2	MITSUBISHI	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
FS50VSH2	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 50A I(D) \| TO-263AB