生命周期: | Transferred | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.31 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.031 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS50UM-3-A8 | RENESAS |
获取价格 |
High-Speed Switching Use Nch Power MOS FET | |
FS50UMH03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-220AB | |
FS50UMH06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-220AB | |
FS50UMH-06 | MITSUBISHI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
FS50UMH2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-220AB | |
FS50UMH3 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 50A I(D) | TO-220AB | |
FS50UMJ03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-220AB | |
FS50UMJ-03 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FS50UMJ-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Met | |
FS50UMJ06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-220AB |