FS30VSJ-3

更新时间： 2024-09-15 07:00:11

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体开关晶体管
页数	文件大小	规格书
7页	172K
描述
High-Speed Switching Use Nch Power MOS FET

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中文翻译

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数据手册

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FS30VSJ-3 数据手册

FS30VSJ-3

High-Speed Switching Use

Nch Power MOS FET

REJ03G1416-0200

(Previous: MEJ02G0081-0101)

Rev.2.00

Aug 07, 2006

Features

•

Drive voltage : 4 V

_DSS: 150 V

_{DS(ON) (max)}: 86 mΩ

I_D: 30 A

Integrated Fast Recovery Diode (TYP.) : 100 ns

Outline

RENESAS Package code: PRSS0004AB-A

(Package name: TO-220S)

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

V_GS= 0 V

150

±20

V_DS= 0 V

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

I_DM

120

I_DA

L = 100 µH

I_S

120

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

I_SM

P_D

°C

Tch

Tstg

—

– 55 to +150

1.2

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

12 3 4 5 6 7

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