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FS20UM-6 PDF预览

FS20UM-6

更新时间: 2024-11-10 22:32:11
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
4页 46K
描述
HIGH-SPEED SWITCHING USE

FS20UM-6 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.26 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS20UM-6 数据手册

 浏览型号FS20UM-6的Datasheet PDF文件第2页浏览型号FS20UM-6的Datasheet PDF文件第3页浏览型号FS20UM-6的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS20UM-6  
HIGH-SPEED SWITCHING USE  
FS20UM-6  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
1.3  
10.5MAX.  
r
φ 3.6  
1.0  
0.8  
2.54  
2.54  
0.5  
2.6  
q
w e  
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS ................................................................................ 300V  
¡rDS (ON) (MAX) .............................................................. 0.26  
¡ID ..........................................................................................20A  
e
TO-220  
APPLICATION  
SMPS, DC-DC Converter, battery charger, power  
supply of printer, copier, HDD, FDD, TV, VCR, per-  
sonal computer etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
300  
Unit  
V
VGS = 0V  
VDS = 0V  
±30  
V
20  
A
IDM  
Drain current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
60  
A
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
2.0  
Tstg  
Typical value  
Feb.1999  

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