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FRF9150R

更新时间： 2024-10-14 20:27:35
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 48K
描述
23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

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中文翻译

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FRF9150R 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.29Is Samacsys：N
其他特性：RADIATION HARDENED外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：23 A最大漏源导通电阻：0.14 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：69 A认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FRF9150R 数据手册

 浏览型号FRF9150R的Datasheet PDF文件第2页浏览型号FRF9150R的Datasheet PDF文件第3页浏览型号FRF9150R的Datasheet PDF文件第4页浏览型号FRF9150R的Datasheet PDF文件第5页浏览型号FRF9150R的Datasheet PDF文件第6页 
FRF9150D, FRF9150R,  
FRF9150H  
23A, -100V, 0.140 Ohm, Rad Hard,  
P-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 23A, -100V, r  
= 0.140Ω  
DS(ON)  
TO-254AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
G
• Gamma  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
S
D
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)  
- Performance Permits Limited Use to 3000K RAD (Si)  
• Gamma Dot  
- Survives 3E9 RAD (Si)/s at 80% BV Typically  
DSS  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 7.0nA Per-RAD (Si)/s Typically  
2
• Neutron  
- Pre-RAD Specifications for 3E13 Neutrons/cm  
2
- Usable to 3E14 Neutrons/cm  
Description  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
Intersil Corporation has designed a series of SECOND GENERATION hardened  
power MOSFETs of both N and P channel enhancement types with ratings from  
100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness  
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging  
2
2
from 1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose rate hard- Symbol  
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with  
current limiting.  
D
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
G
This part may be supplied as a die or in various packages other than shown above.  
Reliability screening is available as either non TX (commercial), TX equivalent of  
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for  
any desired deviations from the data sheet.  
S
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified  
C
FRF9150D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
-100  
-100  
V
V
DS  
Drain-Gate Voltage (R  
= 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
GS  
Continuous Drain Current  
DGR  
o
T
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
23  
15  
69  
A
A
A
V
C
C
D
D
o
= +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
DM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
±20  
GS  
Maximum Power Dissipation  
o
T
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
125  
50  
1.00  
W
W
W/ C  
C
C
o
= +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
o
o
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
69  
23  
69  
A
A
A
LM  
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
SM  
o
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
-55 to +150  
C
JC STG  
Lead Temperature (During Soldering)  
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
300  
C
L
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3243.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19994-1  
123456

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与FRF9150R相关器件

型号 品牌 获取价格 描述 数据表
FRF9150R1 RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9150R2 RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9150R3 RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9150R4 RENESAS

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 		23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250D INTERSIL

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 		14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs
FRF9250D1 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250D3 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250D4 RENESAS

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 		Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Me
FRF9250H INTERSIL

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 		14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs
FRF9250H1 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

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