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FRF9250D

更新时间： 2024-10-13 22:31:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
6页 51K
描述
14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs

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FRF9250D 数据手册

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FRF9250D, FRF9250R,  
FRF9250H  
14A, -200V, 0.315 Ohm, Rad Hard,  
P-Channel Power MOSFETs  
June 1998  
Features  
Package  
• 14A, -200V, RDS(on) = 0.315Ω  
TO-254AA  
• Second Generation Rad Hard MOSFET Results From New Design Concepts  
• Gamma  
- Meets Pre-Rad Specifications to 100KRAD(Si)  
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)  
- Performance Permits Limited Use to 3000KRAD(Si)  
• Gamma Dot  
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically  
- Survives 2E12 Typically If Current Limited to IDM  
• Photo Current - 12.0nA Per-RAD(Si)/sec Typically  
2
• Neutron  
- Pre-RAD Specifications for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
CAUTION: Beryllia Warning per MIL-S-19500  
refer to package specifications.  
Description  
The Intersil Corporation has designed a series of SECOND GENERATION hard-  
ened power MOSFETs of both N and P channel enhancement types with ratings  
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose  
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness  
ranging from 1E13n/cm for 500V product to 1E14n/cm for 100V product. Dose  
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and  
2E12 with current limiting.  
Symbol  
2
2
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of  
the vertical DMOS (VDMOS) structure. It is specially designed and processed to  
o
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n )  
exposures. Design and processing efforts are also directed to enhance survival to  
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.  
This part may be supplied as a die or in various packages other than shown above.  
Reliability screening is available as either non TX (commercial), TX equivalent of  
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of  
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for  
any desired deviations from the data sheet.  
o
Absolute Maximum Ratings (TC = +25 C) Unless Otherwise Specified  
FRF9250D, R, H  
UNITS  
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS  
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR  
Continuous Drain Current  
-200  
-200  
V
V
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
14  
9
42  
±20  
A
A
A
V
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS  
Maximum Power Dissipation  
o
TC = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
125  
50  
1.00  
W
W
o
TC = +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT  
o
o
Derated Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
W/ C  
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM  
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS  
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM  
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG  
Lead Temperature (During Soldering)  
42  
14  
42  
A
A
A
o
-55 to +150  
C
o
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL  
300  
C
File Number 3247.1  
1
123456

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与FRF9250D相关器件

型号 品牌 获取价格 描述 数据表
FRF9250D1 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250D3 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250D4 RENESAS

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 		Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Me
FRF9250H INTERSIL

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 		14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs
FRF9250H1 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250H2 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250H4 RENESAS

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 		Power Field-Effect Transistor, 14A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Me
FRF9250R INTERSIL

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 		14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs
FRF9250R1 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
FRF9250R2 RENESAS

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 		14A, 200V, 0.315ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA

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