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FR10D

更新时间： 2024-11-02 12:57:31
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THINKISEMI /
页数 文件大小 规格书
2页 521K
描述
10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes

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FR10D 数据手册

 浏览型号FR10D的Datasheet PDF文件第2页 
FR10A thru FR10M  
FR10A thru FR10M  
Pb Free Plating Product  
10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes  
Unit:inch(millimeter)  
Features  
OUTLINE  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
For surface mounted application  
H
Low profile package  
Cathode Band  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
J
Fast recovery time for high efficiency  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
ꢀ
A
C
E
D
B
F
G
DIMENSIONS  
INCHES  
MIN  
MM  
Mechanical Data  
DIM  
A
B
C
D
E
MAX  
.214  
0
0.203  
0.005  
0.02  
0.056  
0 .179  
0.322  
0.243  
0.240  
MIN  
5.08  
4.70  
0.05  
---  
1.20  
4.27  
7.85  
6.08  
5.95  
MAX  
5.43  
5.30  
0.13  
0.51  
1.42  
4.55  
8.18  
6.18  
6.10  
NOTE  
.200  
0
.177  
0
Cases: HSMC(Round Lead)/SME Pkg  
ꢀ
0.002  
---  
0.047  
0.168  
0.309  
0.239  
0.234  
ꢀ
ꢀ
ꢀ
ꢀ
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Packing: Tape&Reel  
F
G
H
J
HSMC/SMC-W/SMCE  
Weight: 0.093 gram approximately  
Maximum Ratings and Electrical Characteristics  
Rating at 25  
ambient temperature unless otherwise specified.  
℃
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
Type Number  
FS10A FS10B FS10D FS10G FS10J FS10K FS10M  
Units  
Maximum Recurrent Peak Reverse  
Voltage  
VRRM  
50  
100  
200 400  
600 800 1000  
420 560 700  
600 800 1000  
V
Maximum RMS Voltage  
35  
50  
70  
140 280  
200 400  
V
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current See Fig. 1  
10.0  
300  
1.3  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@ 8.0A  
Maximum DC Reverse Current  
o
10  
50  
uA  
uA  
@TA =25 C at Rated DC Blocking Voltage  
o
IR  
@ TA=100 C  
Maximum Reverse Recovery Time  
( Note 1 )  
Trr  
nS  
150  
45  
250  
30  
500  
pF  
Typical Junction Capacitance ( Note 2 )  
Cj  
Maximum Thermal Resistance (Note 3)  
RθJA  
75  
20  
℃/W  
R
θJL  
Operating Temperature Range  
Storage Temperature Range  
℃
℃
TJ  
-55 to +150  
-55 to +150  
TSTG  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas  
Page 1/2  
http://www.thinkisemi.com/  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
12

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