Datasheet > FR10M

FR10M

更新时间： 2024-11-02 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	416K
描述
10.0A patch fast recovery diode 1000V SMC series

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数据手册

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FR10M 数据手册

FR10A - FR10M

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50-1000 V

CURRENT: 10.0 A

Features

Glass Passivated Die Construction

Fast Recovery Time for High Efficiency

Low Forward Voltage Drop and High Current

Capability

Ideally Suited for Automatic Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

SMC/DO-214AB

Mechanical Data

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Case: SMC(DO-214AB),Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

@ T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

FR10A FR10B FR10D FR10G FR10J FR10K FR10M

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

= 55ꢀC

@ T_T

10.0

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

300

Forward Voltage

@ I

_F= 10.0A

V_FM

I_RM

1.3

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A= 25ꢀC

@ TA = 100ꢀC

ꢁA

150

250

500

t_rr

C_j

Maximum Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

2 2

R_ꢂJT

T_j,T_STG

Typical Thermal Resistance Junction to Terminal (Note 1)

Operating and Storage Temperature Range

K/W

ꢀC

-65 to +150

Notes:

1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm²(0.013 mm thick) copper pad as heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Reverse recovery test conditions: I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

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