Datasheet > FR10B

FR10B

更新时间： 2024-11-02 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	416K
描述
10.0A patch fast recovery diode 100V SMC series

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中文翻译

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数据手册

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FR10B 数据手册

FR10A - FR10M

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50-1000 V

CURRENT: 10.0 A

Features

Glass Passivated Die Construction

Fast Recovery Time for High Efficiency

Low Forward Voltage Drop and High Current

Capability

Ideally Suited for Automatic Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

SMC/DO-214AB

Mechanical Data

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

Case: SMC(DO-214AB),Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

@ T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

FR10A FR10B FR10D FR10G FR10J FR10K FR10M

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

= 55ꢀC

@ T_T

10.0

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

300

Forward Voltage

@ I

_F= 10.0A

V_FM

I_RM

1.3

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A= 25ꢀC

@ TA = 100ꢀC

ꢁA

150

250

500

t_rr

C_j

Maximum Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

2 2

R_ꢂJT

T_j,T_STG

Typical Thermal Resistance Junction to Terminal (Note 1)

Operating and Storage Temperature Range

K/W

ꢀC

-65 to +150

Notes:

1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm²(0.013 mm thick) copper pad as heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Reverse recovery test conditions: I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

1 of 2

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与FR10B相关器件

型号	品牌	获取价格	描述	数据表
FR10BP	MCC	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, PLASTIC, HSMC, 2 PIN, Rectifier Dio
FR10B-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, PLASTIC, HSMC, 2
FR10B-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, DO-214AB, HSMC, 2 PIN
FR10C03CF	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFA	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFD	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C03CFS	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CF	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CFA	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers
FR10C04CFD	THINKISEMI	获取价格	10.0 Ampere Insulated Dual Common Anode Fast Recovery Rectifiers

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