Datasheet > FQT1N80TF-WS

FQT1N80TF-WS

更新时间： 2024-11-26 11:11:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
9页	1065K
描述
功率 MOSFET，N 沟道，QFET®，800 V，0.2 A，20 Ω，SOT-223

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FQT1N80TF-WS 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G4	Reach Compliance Code：	not_compliant
风险等级：	0.72	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	800 V
最大漏极电流 (Abs) (ID)：	0.2 A	最大漏极电流 (ID)：	0.0002 A
最大漏源导通电阻：	20 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	5 pF	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2.1 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQT1N80TF-WS 数据手册

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与FQT1N80TF-WS相关器件

型号	品牌	获取价格	描述	数据表
FQT26N03L	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
FQT26N03LD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
FQT26N03LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.9A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
FQT2P25	FAIRCHILD	获取价格	250V P-Channel MOSFET
FQT2P25L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25TF	ONSEMI	获取价格	P 沟道，QFET® MOSFET，-250 V，-0.55 A，4.0Ω
FQT3N25	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met
FQT3N25L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met

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