生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.44 | 雪崩能效等级(Eas): | 120 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 0.55 A |
最大漏源导通电阻: | 4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 2.2 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQT2P25S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta | |
FQT2P25TF | FAIRCHILD |
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Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta | |
FQT2P25TF | ONSEMI |
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P 沟道,QFET® MOSFET,-250 V,-0.55 A,4.0Ω | |
FQT3N25 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQT3N25L99Z | FAIRCHILD |
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Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQT3N25S62Z | FAIRCHILD |
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Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQT3P20 | FAIRCHILD |
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200V P-Channel MOSFET | |
FQT3P20S62Z | FAIRCHILD |
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Power Field-Effect Transistor, 0.67A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Me | |
FQT3P20TF | ONSEMI |
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功率 MOSFET,P 沟道,QFET®,-200 V,-0.67 A,2.7 Ω,SOT | |
FQT4N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |