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FQT1N60CTF-WS

更新时间： 2024-09-30 12:03:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	1043K
描述
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm

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FQT1N60CTF-WS 数据手册

March 2013

FQT1N60C

N-Channel QFET^®MOSFET

600V, 0.2 A, 11.5 Ω

Description

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

•

0.2 A, 600 V, R_DS(on)=9.3 Ω(Typ.)@V_GS=10 V, I_D=0.1 A

Low Gate Charge (Typ. 4.8 nC)

Low C_rss(Typ. 3.5 pF)

100% Avalanche Tested

RoHS Compliant

•

SOT-223

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FQT1N60C

600

Unit

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P ul sed

0.2

I_D

D r a in C u r r e n t

0.12

0.8

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

0.2

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

0.2

V/ns

W/^oC

^oC

4.5

(T_C= 25^oC)

- Derate above 25^oC

2.1

P_D

Power Dissipation

0.02

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Ambient*

Unit

^oC/W

Min.

Max.

R_θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FQT1N60C Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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