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FQT1N80TFWS

更新时间： 2024-09-30 12:04:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	802K
描述
N-Channel MOSFET

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数据手册

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FQT1N80TFWS 数据手册

November 2007

QFET

FQT1N80

N-Channel MOSFET

800V, 0.2A, 20Ω

Features

Description

•

R_DS(on)= 15.5Ω (Typ.)@ V_GS= 10V, I_D= 0.1A

Low gate charge ( Typ. 5.5nC)

Low Crss ( Typ. 2.7pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

SOT-223

FQT Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FQT1N80

800

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P ul sed

0.2

I_D

D r a in C u r r e n t

0.12

0.8

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

0.2

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

0.2

V/ns

W/^oC

^oC

4.0

(T_C= 25^oC)

- Derate above 25^oC

2.1

P_D

Power Dissipation

0.02

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Ambient*

Units

^oC/W

Min.

Max.

R_θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FQT1N80 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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FQT1N80TF-WS	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，800 V，0.2 A，20 Ω，SOT-223
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FQT2P25L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.55A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Meta
FQT2P25TF	ONSEMI	获取价格	P 沟道，QFET® MOSFET，-250 V，-0.55 A，4.0Ω
FQT3N25	FAIRCHILD	获取价格	Power Field-Effect Transistor, 0.7A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met