FQB8N60CF

更新时间： 2024-11-24 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	708K
描述
600V N-Channel MOSFET

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中文翻译

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数据手册

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FQB8N60CF 数据手册

December 2005

FRFET

FQB8N60CF

600V N-Channel MOSFET

Features

Description

•

6.26A, 600V, R_DS(on)

1.5 Ω @V_GS= 10 V

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

Low gate charge ( typical 28nC)

Low Crss ( typical 12pF)

Fast switching

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, electronic lamp ballasts

based on half bridge topology.

100% avalanche tested

Improved dv/dt capability

D²-PAK

FQB Series

Absolute Maximum Ratings

Symbol

Parameter

FQB8N60CF

Units

V_DSS

I_D

Drain-Source Voltage

600

6.26

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

3.96

(Note 1)

I_DM

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

160

6.26

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

14.7

V/ns

4.5

147

- Derate above 25°C

1.18

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

FQB8N60CF

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

0.85

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB8N60CF Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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