Datasheet > FPN330AD75Z

FPN330AD75Z

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	440K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

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FPN330AD75Z 数据手册

FPN330

FPN330A

TO-226

NPN Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 3.0 A continuous.

Sourced from Process NB.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current

- Continuous

3.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FPN330 / FPN330A

P_D

Total Device Dissipation

1.0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJC

R_θJA

°C/W

125

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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