Datasheet > FPN430AD74Z

FPN430AD74Z

更新时间： 2024-02-14 16:22:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	440K
描述
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE

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FPN430AD74Z 数据手册

FPN430

FPN430A

TO-226

PNP Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 2.0 A continuous.

Sourced from Process PB.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current

- Continuous

2.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FPN430 / FPN430A

P_D

Total Device Dissipation

1.0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJC

R_θJA

°C/W

125

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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