FPN530

更新时间： 2024-02-27 14:48:54

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号双极晶体管
页数	文件大小	规格书
4页	49K
描述
NPN Low Saturation Transistor

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技术参数
数据手册

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FPN530 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
风险等级：	5.78	最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	30 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JEDEC-95代码：	TO-226
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT APPLICABLE	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

FPN530 数据手册

FPN530

FPN530A

TO-226

NPN Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 3.0 A continuous.

Sourced from Process NC.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current

- Continuous

3.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FPN530 / FPN530A

P_D

Total Device Dissipation

1.0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJC

R_θJA

°C/W

125

1999 Fairchild Semiconductor Corporation

12 3 4

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